16 research outputs found

    Seismic Design of Offshore Wind Turbines: Good, Bad and Unknowns

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    From MDPI via Jisc Publications RouterHistory: accepted 2021-06-08, pub-electronic 2021-06-12Publication status: PublishedLarge scale offshore wind farms are relatively new infrastructures and are being deployed in regions prone to earthquakes. Offshore wind farms comprise of both offshore wind turbines (OWTs) and balance of plants (BOP) facilities, such as inter-array and export cables, grid connection etc. An OWT structure can be either grounded systems (rigidly anchored to the seabed) or floating systems (with tension legs or catenary cables). OWTs are dynamically-sensitive structures made of a long slender tower with a top-heavy mass, known as Nacelle, to which a heavy rotating mass (hub and blades) is attached. These structures, apart from the variable environmental wind and wave loads, may also be subjected to earthquake related hazards in seismic zones. The earthquake hazards that can affect offshore wind farm are fault displacement, seismic shaking, subsurface liquefaction, submarine landslides, tsunami effects and a combination thereof. Procedures for seismic designing OWTs are not explicitly mentioned in current codes of practice. The aim of the paper is to discuss the seismic related challenges in the analysis and design of offshore wind farms and wind turbine structures. Different types of grounded and floating systems are considered to evaluate the seismic related effects. However, emphasis is provided on Tension Leg Platform (TLP) type floating wind turbine. Future research needs are also identified

    Antiferromagnetic spintronics

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    Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics.Comment: 13 pages, 7 figure

    Spin transport and spin torque in antiferromagnetic devices

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    Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices
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